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Data Sheet No. PD-6.026C
IR2112
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs
Product Summary
VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns 30 ns
Packages
Description
The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
HO VDD HIN SD LIN VSS VCC V DD HIN SD LIN V SS VCC COM LO VB VS TO LOAD
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IR2112
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Symbol
VB VS VHO VCC VLO VDD VSS VIN dV s/dt PD
Parameter Definition
High Side Floating SupplyVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic SupplyVoltage Logic Supply OffsetVoltage Logic InputVoltage (HIN, LIN & SD) Allowable Offset SupplyVoltage Transient (Figure 2) Package Power Dissipation @ TA +25C (14 Lead DIP) (14 Lead DIP w/o Lead 4) (16 Lead DIP w/o Leads 5 & 6) (16 Lead SOIC)
Value Min.
-0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VCC - 25 VSS - 0.3 -- -- -- -- -- -- -- -- -- -- -55 --
Max.
625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VSS + 25 VCC + 0.3 VDD + 0.3 50 1.6 1.5 1.6 1.25 75 85 75 100 150 150 300
Units
V
V/ns
W
RJA
Thermal Resistance, Junction to Ambient
(14 Lead DIP)
(14 Lead DIP w/o Lead 4) (16 Lead DIP w/o Leads 5 & 6) (16 Lead SOIC) TJ TS TL Junction Temperature Storage Temperature LeadTemperature (Soldering, 10 seconds)
C/W
C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.
Symbol
VB VS VHO VCC VLO VDD VSS VIN TA
Parameter Definition
High Side Floating Supply AbsoluteVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic SupplyVoltage Logic Supply OffsetVoltage Logic InputVoltage (HIN, LIN & SD) AmbientTemperature
Value Min.
VS + 10 Note 1 VS 10 0 VSS + 5 -5 VSS -40
Max.
VS + 20 600 VB 20 VCC VSS + 20 5 VDD 125
Units
V
C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
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IR2112
Dynamic Electrical Characteristics
VBIAS (VCC , VBS, VDD) = 15V, CL = 1000 pF, TA = 25C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
t on toff t sd tr tf MT
Parameter Definition
Turn-On Propagation Delay Turn-Off Propagation Delay Shutdown Propagation Delay Turn-On RiseTime Turn-Off Fall Time Delay Matching, HS & LS Turn-On/Off
Value Figure Min. Typ. Max. Units Test Conditions
7 8 9 10 11 -- -- -- -- -- -- -- 125 105 105 80 40 -- 180 160 160 130 65 30 Figure 5 VS = 0V VS = 600V V S = 600V
ns
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VIH VIL VOH VOL I LK I QBS I QCC I QDD I IN+ I INVBSUV+ VBSUVVCCUV+ VCCUVI O+ I O-
Parameter Definition
Logic "1" Input Voltage Logic "0" Input Voltage High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Quiescent VDD Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current
Figure Min.
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 9.5 -- -- -- -- -- -- -- -- -- 7.4 7.0 7.6 7.2 200 420
Value Typ. Max. Units Test Conditions
-- -- -- -- -- 25 80 2.0 20 -- 8.5 8.1 8.6 8.2 250 500 -- 6.0 100 100 50 60 180 5.0 40 1.0 9.6 9.2 9.6 9.2 -- -- A VO = 0V, VIN = VDD PW 10 s VO = 15V, VIN = 0V PW 10 s V A V mV IO = 0A IO = 0A VB = VS = 600V VIN = 0V or VDD VIN = 0V or VDD VIN = 0V or VDD VIN = VDD VIN = 0V
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IR2112
Functional Block Diagram
VB VDD RQ S HIN
HV LEVEL SHIFT
UV DETECT PULSE FILTER
R R S
Q HO
VDD/VCC LEVEL SHIFT
PULSE GEN
VS
SD UV DETECT
VCC VDD /VCC LEVEL SHIFT
LIN S RQ VSS
LO DELAY COM
Lead Definitions
Lead Symbol Description
VDD HIN SD LIN V SS VB HO VS VCC LO COM Logic supply Logic input for high side gate driver output (HO), in phase Logic input for shutdown Logic input for low side gate driver output (LO), in phase Logic ground High side floating supply High side gate drive output High side floating supply return Low side supply Low side gate drive output Low side return
Lead Assignments
14 Lead DIP
14 Lead DIP w/o Lead 4
16 Lead DIP w/o Leads 4 & 5
16 Lead SOIC (Wide Body)
IR2112
B-50
IR2112-1 Part Number
IR2112-2
IR2112S
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IR2112
Device Information
Process & Design Rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 220 100 X 117 X 26 (mil)
Thickness of Gate Oxide Connections First Layer
Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe
Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness
Package Remarks:
Method Material Material Die Area Lead Plating Types Materials
800A Poly Silicon 4 m 6 m 5000A Al - Si (Si: 1.0% 0.1%) 6 m 9 m 20,000A 8 m X 8 m PSG (SiO2) 1.5 m PSG (SiO2) 1.5 m Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 14 & 16 Lead PDIP / 16 Lead SOIC EME6300 / MP150 / MP190
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IR2112
HV = 10 to 600V
IR2112
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
(0 to 600V) IR2112
HIN LIN
ton
50%
50%
tr 90%
t off 90%
tf
HO LO
Figure 3. Switching Time Test Circuit
10%
10%
Figure 4. Switching Time Waveform Definition
HIN LIN
50%
50%
SD
50%
LO
HO
10%
t sd
MT
MT 90%
HO LO
90%
LO
Figure 3. Shutdown Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
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IR2112
250 250 200 Turn-On Delay Time (ns) Turn-On Delay Time (ns) 200
150
150
Typ.
100
Typ.
100
50
50
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
250
250
200 Turn-Off Delay Time (ns) Turn-Off Delay Time (ns)
200
150
150
Typ.
100
Typ.
100
50
50
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
250
250
200 Shutdown Delay Time (ns) Shutdown Delay time (ns)
200
150
150
Typ.
100
Typ.
100
50
50
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 9A. Shutdown Time vs. Temperature
Figure 9B. Shutdown Time vs. Voltage
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IR2112
250 250 200 Turn-On Rise Time (ns) Turn-On Rise Time (ns) 200
150
150
100
Typ.
100
Typ.
50
50
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
125
125
100 Turn-Off Fall Time (ns) Turn-Off Fall Time (ns)
100
75
75
50
Typ.
50
Typ.
25
25
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 11B. Turn-Off Fall Time vs. Voltage
15.0
15.0
12.0 Logic "1" Input Threshold (V)
Min.
12.0 Logic "1" Input Threshold (V)
9.0
9.0
6.0
6.0
Min.
3.0
3.0
0.0 -50
0.0 -25 0 25 50 75 100 125 5 7.5 10 12.5 15 17.5 20 Temperature (C) V DD Logic Supply Voltage (V)
Figure 12A. Logic "1" Input Threshold vs. Temperature
Figure 12B. Logic "1" Input Threshold vs. Voltage
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IR2112
15.0 15.0 12.0 Logic "0" Input Threshold (V) Logic "0" Input Threshold (V) 12.0
9.0
9.0
6.0
Max.
6.0
3.0
3.0
Max.
0.0 -50
0.0 -25 0 25 50 75 100 125 5 7.5 10 12.5 15 17.5 20 Temperature (C) V DD Logic Supply Voltage (V)
Figure 13A. Logic "0" Input Threshold vs. Temperature
Figure 13B. Logic "0" Input Threshold vs. Voltage
1.00
1.00
0.80 High Level Output Voltage (V) High Level Output Voltage (V)
Max.
0.80
0.60
0.60
0.40
0.40
0.20
0.20
Max.
0.00 -50
0.00 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 14A. High Level Output vs. Temperature
Figure 14B. High Level Output vs. Voltage
1.00
1.00
0.80 Low Level Output Voltage (V) Low Level Output Voltage (V)
Max.
0.80
0.60
0.60
0.40
0.40
0.20
0.20
Max.
0.00 -50
0.00 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 15A. Low Level Output vs. Temperature
Figure 15B. Low Level Output vs. Voltage
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IR2112
500 500 Offset Supply Leakage Current (A) Offset Supply Leakage Current (A) 400 400
300
300
200
200
100
Max.
100
Max.
0 -50 -25 0 25 50 75 100 125 Temperature (C)
0 0 100 200 300 400 500 600 V B Boost Voltage (V)
Figure 16A. Offset Supply Current vs. Temperature
Figure 16B. Offset Supply Current vs. Voltage
100
100
80 VBS Supply Current (A) VBS Supply Current (A)
80
60
60
40
40
20
Typ.
20
Typ.
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) V BS Floating Supply Voltage (V)
Figure 17A. VBS Supply Current vs. Temperature
Figure 17B. VBS Supply Current vs. Voltage
250
250
200 VCC Supply Current (A) VCC Supply Current (A)
200
150
150
100
100
Typ.
Typ.
50
50
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) V CC Fixed Supply Voltage (V)
Figure 18A. VCC Supply Current vs. Temperature
Figure 18B. V CC Supply Current vs. Voltage
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IR2112
10.0 10.0 8.0 VDD Supply Current (A) VDD Supply Current (A)
Typ.
8.0
6.0
6.0
4.0
4.0
2.0
2.0
Typ.
0.0 -50
0.0 -25 0 25 50 75 100 125 5 7.5 10 12.5 15 17.5 20 Temperature (C) VDD Logic Supply Voltage (V)
Figure 19A. VDD Supply Current vs. Temperature
Figure 19B. VDD Supply Current vs. Voltage
100
100
Logic "1" Input Bias Current (A)
60
Logic "1" Input Bias Current (A)
Typ.
80
80
60
40
40
20
20
T yp.
0 -50
0 -25 0 25 50 75 100 125 5 7.5 10 12.5 15 17.5 20 Temperature (C) VDD Logic Supply Voltage (V)
Figure 20A. Logic "1" Input Current vs. Temperature
Figure 20B. Logic "1" Input Current vs. Voltage
5.00
5.00
Logic "0" Input Bias Current (A)
3.00
Logic "0" Input Bias Current (A)
4.00
4.00
3.00
2.00
2.00
1.00
Max.
1.00
Max.
0.00 -50
0.00 -25 0 25 50 75 100 125 5 7.5 10 12.5 15 17.5 20 Temperature (C) VDD Logic Supply Voltage (V)
Figure 21A. Logic "0" Input Current vs. Temperature
Figure 21B. Logic "0" Input Current vs. Voltage
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IR2112
11.0 11.0 VBS Undervoltage Lockout + (V) 10.0 10.0
9.0
Typ.
VBS Undervoltage Lockout - (V)
9.0
8.0
8.0
Typ.
7.0
7.0
6.0 -50
-25
0
25
50
75
100
125
6.0 -50
-25
0
25
50
75
100
125
Temperature (C)
Temperature (C)
Figure 22. VBS Undervoltage (+) vs. Temperature
Figure 23. VBS Undervoltage (-) vs. Temperature
11.0
11.0
VCC Undervoltage Lockout + (V)
9.0
Typ.
VCC Undervoltage Lockout - (V)
10.0
10.0
9.0
Typ.
8.0
8.0
7.0
7.0
6.0 -50
-25
0
25
50
75
100
125
6.0 -50
-25
0
25
50
75
100
125
Temperature (C)
Temperature (C)
Figure 24. VCC Undervoltage (+) vs. Temperature
Figure 25. VCC Undervoltage (-) vs. Temperature
500
500
400 Output Source Current (mA) Output Source Current (A)
400
300
Typ.
300
200
200
Typ.
100
100
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 26A. Output Source Current vs. Temperature
Figure 26B. Output Source Current vs. Voltage
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IR2112
750 750 600 Output Sink Current (mA)
Typ.
600 Output Sink Current (A)
450
450
Typ.
300
300
150
150
0 -50
0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (C) VBIAS Supply Voltage (V)
Figure 27A. Output Sink Current vs. Temperature
Figure 27B. Output Sink Current vs. Voltage
150
150
320V
125 Junction Temperature (C)
320V
125 Junction Temperature (C)
100
100
140V
75
140V
75
10V
50
10V
50
25
25
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure 28. IR2112 TJ vs. Frequency (IRFBC20) RGATE = 33, VCC = 15V
Figure 29. IR2112 TJ vs. Frequency (IRFBC30) RGATE = 22 , VCC = 15V
150
320V
150
320V 140V 10V
125
140V
125 Junction Temperature (C)
Junction Temperature (C)
100
10V
100
75
75
50
50
25
25
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure 30. IR2112 TJ vs. Frequency (IRFBC40) RGATE = 15, VCC = 15V
Figure 31. IR2112 TJ vs. Frequency (IRFPE50) RGATE = 10 , VCC = 15V
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IR2112
150
320V
150
320V
140V
125 Junction Temperature (C) Junction Temperature (C)
125
100
140V
100
75
10V
75
10V
50
50
25
25
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure 32. IR2112S TJ vs. Frequency (IRFBC20) RGATE = 33, VCC = 15V
Figure 33. IR2112S TJ vs. Frequency (IRFBC30) RGATE = 22, VCC = 15V
150
320V 140V
150
320V 140V 10V
125 Junction Temperature (C)
10V
125 Junction Temperature (C)
100
100
75
75
50
50
25
25
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure 34. IR2112S TJ vs. Frequency (IRFBC40) RGATE = 15, VCC = 15V
Figure 35. IR2112S TJ vs. Frequency (IRFPE50) RGATE = 10, VCC = 15V
0.0
20.0
Typ.
-6.0
VSS Logic Supply Offset Voltage (V)
-3.0 VS Offset Supply Voltage (V)
16.0
12.0
-9.0
8.0
Typ.
-12.0
4.0
-15.0 10 12 14 16 18 20 V BS Floating Supply Voltage (V)
0.0 10 12 14 16 18 20 V CC Fixed Supply Voltage (V)
Figure 36. Maximum VS Negative Offset vs. VBS Supply Voltage
Figure 37. Maximum VSS Positive Offset vs. VCC Supply Voltage
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